1 research outputs found
High-Resolution X-Ray Studies of the Direct Spin Contact of EuO with Silicon
Ferromagnetic semiconductor europium monoxide (EuO) is believed to be an
effective spin injector when directly integrated with silicon. Injection
through spin-selective ohmic contact requires superb structural quality of the
interface EuO/Si. Recent breakthrough in manufacturing free-of-buffer-layer
EuO/Si junctions calls for structural studies of the interface between the
semiconductors. Ex situ high-resolution X-ray diffraction and reflectivity
accompanied by in situ reflection high-energy electron diffraction reveal
direct coupling at the interface. A combined analysis of XRD and XRR data
provides a common structural model. The structural quality of the EuO/Si spin
contact by far exceeds that of previous reports and thus makes a step forward
to the ultimate goals of spintronics